COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, COMPOSTION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD

Title:

Document Type and Number:

WIPO Patent Application WO/2017/043561

Kind Code:

A1

Abstract:

A compound represented by formula (1) and/or a resin containing the compound as a structural component is used. (In formula (1), R1 is a C1-60 2n-valent group or a single bond; R2 through R5 each independently are a C1-10 linear, branched, or cyclic alkyl group, C6-10 aryl group, C2-10 alkenyl group, C1-30 alkoxy group, halogen atom, thiol group, hydroxyl group, or group in which a hydrogen atom of a hydroxyl group has been substituted by an acid-dissociable group, where at least one selected from R2 through R5 is a group in which a hydrogen atom of a hydroxyl group has been substituted by an acid-dissociable group; m2 and m3 each independently are an integer of 0-8, and m4 and m5 each independently are an integer of 0-9, where m2, m3, m4, and m5 are not simultaneously 0; n is an integer of 1-4; and p2 through p5 each independently are an integer of 0-2.)

Inventors:

TOIDA TAKUMI (JP)
SHIMIZU YOUKO (JP)
MAKINOSHIMA TAKASHI (JP)
SATO TAKASHI (JP)
ECHIGO MASATOSHI (JP)

Application Number:

PCT/JP2016/076392

Publication Date:

March 16, 2017

Filing Date:

September 08, 2016

Export Citation:

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Assignee:

MITSUBISHI GAS CHEMICAL CO (JP)

International Classes:

C07C69/96; G03F7/004; G03F7/039; G03F7/11; C07C39/15; C07C39/367

Domestic Patent References:

WO2013024778A1

2013-02-21

Foreign References:

CN104557552A	2015-04-29
JP2015087115A	2015-05-07
JPS62191850A	1987-08-22
JP2015514691A	2015-05-21
US2587437A	1952-02-26

Other References: