Title:
COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2012/147472
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a compound semiconductor single crystal substrate by which a compound semiconductor substrate having sufficient thinness can be obtained at low cost from an ingot formed using a horizontal boat method, and also provided is this compound semiconductor single crystal substrate. The method for manufacturing a compound semiconductor single crystal substrate is provided with a step for preparing a single crystal ingot (1) formed from a compound semiconductor that has been formed in the (111) orientation using a horizontal boat method, a step for fixing that ingot (1) in a jig, and a step for slicing the ingot (1) fixed by the jig using a wire saw by raising the ingot (1) fixed in the jig in a direction orthogonal to the back and forth direction of the wire (7) while moving the wire (7) of the wire saw back and forth in the (01-1) direction at a planar orientation of (100) ± 7° or (511) ± 7°.
Inventors:
FUJIWARA SHINYA (JP)
FUJINAGA TOSHIHIRO (JP)
SUGIMOTO MASATOSHI (JP)
FUJINAGA TOSHIHIRO (JP)
SUGIMOTO MASATOSHI (JP)
Application Number:
PCT/JP2012/059157
Publication Date:
November 01, 2012
Filing Date:
April 04, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
FUJIWARA SHINYA (JP)
FUJINAGA TOSHIHIRO (JP)
SUGIMOTO MASATOSHI (JP)
FUJIWARA SHINYA (JP)
FUJINAGA TOSHIHIRO (JP)
SUGIMOTO MASATOSHI (JP)
International Classes:
H01L21/304; B24B27/06; B28D5/04; C30B29/40
Foreign References:
JPH03133607A | 1991-06-06 | |||
JPS6433091A | 1989-02-02 | |||
JPS56105638A | 1981-08-22 | |||
JPS5972730A | 1984-04-24 | |||
JP2000061800A | 2000-02-29 | |||
JP2000309016A | 2000-11-07 |
Attorney, Agent or Firm:
NAKATA, Motomi et al. (JP)
Nakada Motoki (JP)
Nakada Motoki (JP)
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Claims: