Title:
COMPOUND SINTERED COMPACT AND TOOL USING SAME
Document Type and Number:
WIPO Patent Application WO/2021/186617
Kind Code:
A1
Abstract:
This compound sintered compact comprises a cubic crystal boron nitride particle, a hexagonal crystal boron nitride particle, or, a hexagonal crystal boron nitride particle and a wurtzite form boron nitride particle, wherein the dislocation density of the cubic crystal boron nitride particle is between 1 × 1015/m2 and 1 × 1017/m2 inclusive, the equivalent circle median diameter d50 of the cubic crystal boron nitride particle is between 10 nm and 500 nm inclusive, and the volume-based content percentage Vc for the cubic crystal boron nitride particle, the volume-based content percentage Vh for the hexagonal crystal boron nitride particle, and the volume-based content percentage Vw for the wurtzite form boron nitride particle, satisfy the relationship of formula 1.
Formula 1: 0.015 ≤ (Vh + Vw)/(Vc + Vh + Vw) ≤ 0.5.
Inventors:
ISHIDA YUH (JP)
KUKINO SATORU (JP)
MATSUKAWA MICHIKO (JP)
KUKINO SATORU (JP)
MATSUKAWA MICHIKO (JP)
Application Number:
PCT/JP2020/012007
Publication Date:
September 23, 2021
Filing Date:
March 18, 2020
Export Citation:
Assignee:
SUMITOMO ELECTRIC HARDMETAL CORP (JP)
International Classes:
B23B27/14; B23B51/00; B23C5/16; B23G5/06; B24D3/00; C04B35/5831
Domestic Patent References:
| WO2019244894A1 | 2019-12-26 | |||
| WO2020050229A1 | 2020-03-12 |
Foreign References:
| JP2003192443A | 2003-07-09 | |||
| JPH0768153A | 1995-03-14 | |||
| JP2004250278A | 2004-09-09 | |||
| JPH11246271A | 1999-09-14 | |||
| JP2014034487A | 2014-02-24 | |||
| JP2006201216A | 2006-08-03 |
Other References:
T. UNGARA. BORBELY: "The effect of dislocation contrast on x-ray line broadening: A new approach to line profile analysis", APPL. PHYS. LETT., vol. 69, no. 21, 1996, pages 3173, XP012016627, DOI: 10.1063/1.117951
T. UNGARS. OTTP. SANDERSA. BORBELYJ. WEERTMAN: "Dislocations, grain size and planar faults in nanostructured copper determined by high resolution X-ray diffraction and a new procedure of peak profile analysis", ACTA MATER., vol. 46, no. 10, 1998, pages 3693 - 3699, XP027395830
See also references of EP 4122627A4
T. UNGARS. OTTP. SANDERSA. BORBELYJ. WEERTMAN: "Dislocations, grain size and planar faults in nanostructured copper determined by high resolution X-ray diffraction and a new procedure of peak profile analysis", ACTA MATER., vol. 46, no. 10, 1998, pages 3693 - 3699, XP027395830
See also references of EP 4122627A4
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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