Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
COMPOUND, THIN-FILM-FORMING RAW MATERIAL, THIN-FILM-FORMING RAW MATERIAL FOR ATOMIC-LAYER DEPOSITION METHOD, AND PROCESS FOR PRODUCING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2018/088078
Kind Code:
A1
Abstract:
A thin-film-forming raw material which comprises a compound represented by general formula (1) (wherein R1 to R6 each independently represent a hydrogen atom or a linear or branched C1-4 alkyl group; R7, R8, and R9 each represent a linear or branched C1-4 alkyl group; and M1 represents a zirconium or titanium atom). It is preferable that one of R1 to R5 be a methyl group and the remaining four be hydrogen atoms. It is preferable that R6 and R7 be each a methyl or ethyl group. It is preferable that R8 and R9 be each a methyl or ethyl group.

Inventors:
SATO HIROKI (JP)
WADA SENJI (JP)
SAITO AKIO (JP)
Application Number:
PCT/JP2017/036317
Publication Date:
May 17, 2018
Filing Date:
October 05, 2017
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
ADEKA CORP (JP)
International Classes:
C07F17/00; C07F7/00; C07F7/28; C23C16/40; H01L21/316
Domestic Patent References:
WO2005063685A12005-07-14
WO2005085175A12005-09-15
Foreign References:
JP2009516078A2009-04-16
JP2012056860A2012-03-22
JP2006312600A2006-11-16
JP2005354076A2005-12-22
JP2016037654A2016-03-22
Other References:
GIOVANNI CARTA ET AL.: "Growth of Hafnium Dioxide Thin Films by MOCVD Using a New Series of Cyclopentadienyl Hafnium Compounds", CHEMICAL VAPOR DEPOSITION, vol. 13, no. 11, November 2007 (2007-11-01), pages 626 - 632, XP001507845
SENJI WADA ET AL.: "Recent Development of ALD Precursors for Semiconductor Devices", ECS TRANSACTIONS, vol. 25, no. 4, 2009, pages 209 - 216, XP055502099
Attorney, Agent or Firm:
SOGA, Michiharu et al. (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: IMPELLER

Next Patent: COMPOUND, STARTING MATERIAL FOR THIN FILM FORMATION, THIN FILM PRODUCTION METHOD, AND AMIDINE COMPOU...