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Patent Searching and Data


Title:
CONDUCTIVE BRIDGE SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/157279
Kind Code:
A1
Abstract:
A conductive bridge semiconductor component and a manufacturing method therefor. The conductive bridge semiconductor component comprises in an upward sequence: a lower electrode (10), a resistive functional layer (20), an ion barrier layer (30), and an active upper electrode (40), where holes (31) for active electrically-conductive ions to pass through are provided on the ion barrier layer (30). A conductive bridge resistive memory and a conductive bridge selector can be manufactured on the basis of such structure, by regulating the number, diameter, and density of the holes on the ion barrier layer, implemented is precise regulation of an electrically-conductive pathway for a conductive bridge-based memory and selector.

Inventors:
LIU QI (CN)
ZHAO XIAOLONG (CN)
LIU SEN (CN)
LIU MING (CN)
LV HANGBING (CN)
LONG SHIBING (CN)
WANG YAN (CN)
WU FACAI (CN)
Application Number:
PCT/CN2017/075141
Publication Date:
September 07, 2018
Filing Date:
February 28, 2017
Export Citation:
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Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L27/11524; H01L29/06
Foreign References:
CN105990519A2016-10-05
DE102009054003A12010-08-05
GB2501760A2013-11-06
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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