Title:
CONNECTING MATERIAL, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2011/125140
Kind Code:
A1
Abstract:
Lead-free connecting materials having satisfactory wetting properties and high heat resistance have come to be required as a result of increases in the temperature of element connection parts due to increases in the capacity of power modules.
A Sn-based layer (11a) is formed by cladding or press forming as an outermost layer of an alloy foil (13) which comprises Sn (11b) and Al (12) as major components and which has an Al content of 40 mass% or less, thereby removing an oxide film from the alloy surface layer. Since the Al content of the alloy foil is 40 mass% or less, separation between the Sn and the Al is inhibited and wetting properties can be ensured. Thus, a connecting material and a connection which each has high heat resistance and is lightweight are possible.
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Inventors:
IKEDA, Osamu (HITACHI LTD., 292 Yoshida-cho, Totsuka-ku, Yokohama-sh, Kanagawa 17, 〒2440817, JP)
池田 靖 (〒17 神奈川県横浜市戸塚区吉田町２９２番地 株式会社日立製作所 生産技術研究所内 Kanagawa, 〒2440817, JP)
池田 靖 (〒17 神奈川県横浜市戸塚区吉田町２９２番地 株式会社日立製作所 生産技術研究所内 Kanagawa, 〒2440817, JP)
Application Number:
JP2010/006335
Publication Date:
October 13, 2011
Filing Date:
October 27, 2010
Export Citation:
Assignee:
HITACHI, LTD. (6-6 Marunouchi 1-chome, Chiyoda-ku Tokyo, 80, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
IKEDA, Osamu (HITACHI LTD., 292 Yoshida-cho, Totsuka-ku, Yokohama-sh, Kanagawa 17, 〒2440817, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
IKEDA, Osamu (HITACHI LTD., 292 Yoshida-cho, Totsuka-ku, Yokohama-sh, Kanagawa 17, 〒2440817, JP)
International Classes:
B23K35/22; B23K35/26; B23K35/40; C22C13/00; H01L21/52
Attorney, Agent or Firm:
INOUE, Manabu et al. (6-1, Marunouchi 1-chome, Chiyoda-k, Tokyo 20, 〒1008220, JP)
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Claims: