Title:
CONNECTION MATERIAL, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2011/158449
Kind Code:
A1
Abstract:
In a lead-free connection material used in a semiconductor device including a power module and the like, when being exposed to a temperature higher than a normally used temperature range, there has been a case in which the stress relaxation function thereof is degraded.
To solve this problem, the connection material has a Zn-based layer formed in a region including the most surficial layer and a plurality of floating island-like Al-based phases (3) formed in the Zn-based layer. Two members (1, 2) are connected by the connection material, thereby preventing the wettability and the heat resistance from being degraded by Al oxide and relaxing stress during connection by the Al-based phases (3). In addition, even if the Al-based phases (3) are hardened during use, the flexibility is ensured by a Zn-Al alloy layer (4), so that it is possible to prevent the stress relaxation function of the connection material from being degraded.
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Inventors:
IKEDA, Osamu (HITACHI LTD., 292 Yoshida-cho, Totsuka-ku, Yokohama-sh, Kanagawa 17, 〒2440817, JP)
Application Number:
JP2011/003071
Publication Date:
December 22, 2011
Filing Date:
June 01, 2011
Export Citation:
Assignee:
HITACHI, LTD. (6-6 Marunouchi 1-chome, Chiyoda-ku Tokyo, 80, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
International Classes:
B23K35/14; B23K1/00; B23K35/28; C22C18/04; H01L21/52; H01L21/60; H01R13/03; B23K101/40
Attorney, Agent or Firm:
INOUE, Manabu et al. (6-1, Marunouchi 1-chome, Chiyoda-k, Tokyo 20, 〒1008220, JP)
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