Title:
CONTINUOUS FEED CHEMICAL VAPOR DEPOSITION
Document Type and Number:
WIPO Patent Application WO/2010/042927
Kind Code:
A3
Abstract:
Embodiments of the invention generally relate to a method for forming a multi-layered material during a continuous chemical vapor deposition (CVD) process. In one embodiment, a method for forming a multi-layered material during a continuous CVD process is provided which includes continuously advancing a plurality of wafers through a deposition system having at least four deposition zones. Multiple layers of materials are deposited on each wafer, such that one layer is deposited at each deposition zone. The methods provide advancing each wafer through each deposition zone while depositing a first layer from the first deposition zone, a second layer from the second deposition zone, a third layer from the third deposition zone, and a fourth layer from the fourth deposition zone. Embodiments described herein may be utilized to form an assortment of materials on wafers or substrates, especially for forming Group III/V materials on GaAs wafers.
Inventors:
HE GANG (US)
Application Number:
PCT/US2009/060372
Publication Date:
July 22, 2010
Filing Date:
October 12, 2009
Export Citation:
Assignee:
ALTA DEVICES INC (US)
HE GANG (US)
HE GANG (US)
International Classes:
H01L21/205
Foreign References:
| US20060024442A1 | 2006-02-02 | |||
| US20070068559A1 | 2007-03-29 | |||
| US20060073276A1 | 2006-04-06 |
Other References:
See also references of EP 2351069A4
Attorney, Agent or Firm:
PATTERSON, B. Todd et al. (Suite 1500Houston, Texas, US)
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