Title:
CONTROL SYSTEM AND CONTROL METHOD FOR DIAMETER OF SINGLE CRYSTAL INGOT
Document Type and Number:
WIPO Patent Application WO/2016/117847
Kind Code:
A2
Abstract:
An embodiment of the present invention relates to a system for controlling the deviation in diameter of a silicon ingot when growing a silicon ingot using the Czochralski method, and the system may comprise: a seed chuck for supporting a silicon ingot which is growing and combined with a seed, also known as a seed crystal; a measuring unit for measuring the load applied to the seed chuck by being connected to the upper surface of the seed chuck via a cable; a load control unit for changing the load applied to a silicon ingot by moving the location of the seed chuck toward the upper or lower portions in a state in which the seed chuck is connected to a cable; and a control unit for controlling the load applied to the silicon ingot by driving the load control unit in accordance with a load value measured at the measuring unit. Accordingly, vibration of the seed is prevented while the growth process of a single crystal ingot is carried out, and thereby the deviation in diameter of a growing single crystal ingot can be reduced.
Inventors:
KIM YUN-GOO (KR)
NA GWANG-HA (KR)
AN YUN-HA (KR)
NA GWANG-HA (KR)
AN YUN-HA (KR)
Application Number:
PCT/KR2015/014588
Publication Date:
July 28, 2016
Filing Date:
December 31, 2015
Export Citation:
Assignee:
LG SILTRON INC (KR)
International Classes:
C30B15/20; C30B15/32; C30B29/06
Other References:
See references of EP 3249082A4
Attorney, Agent or Firm:
KIM, KI MOON (KR)
김기문 (KR)
김기문 (KR)
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