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Title:
COPLANAR DOUBLE-GATE ELECTRODE OXIDE THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2017/215138
Kind Code:
A1
Abstract:
A coplanar double-gate electrode oxide thin-film transistor, comprising: a substrate (1); a bottom gate electrode (21) formed above the substrate (1); a first gate insulating layer (31) formed above the bottom gate electrode (21); an oxide semiconductor layer (4) formed above the first gate insulating layer (31); a source electrode contact region (51) and a drain electrode contact region (52) formed at two sides of the oxide semiconductor layer (4); a second gate insulating layer (32) formed above the semiconductor layer (4); and a top gate electrode (22) formed above the second gate insulating layer (32), wherein an upper surface of the substrate (1) is sunken towards the interior thereof to form a groove, and the bottom gate electrode (21) is formed in the groove, so that an upper surface of the bottom gate electrode (21) and the upper surface of the substrate (1) are located on the same horizontal plane. The thin film transistor has the characteristics of both a double-gate electrode and a coplanar structure, thereby improving the stability of the thin film transistor, optimizing the response speed thereof, and reducing properties such as a driving voltage.

Inventors:
XIE, Yingtao (Building C5, Biolake of Optics ValleyNo.666 Gaoxin Avenue,East Lake High-Tech Development Zon, Wuhan Hubei 0, 430070, CN)
Application Number:
CN2016/099064
Publication Date:
December 21, 2017
Filing Date:
September 14, 2016
Export Citation:
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Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD (Building C5 No.666 Gaoxin Avenue, East Lake High-Tech Development ZoneWuhan, Hubei 0, 430070, CN)
International Classes:
H01L29/786; H01L21/34
Foreign References:
CN102130009A2011-07-20
CN105552025A2016-05-04
CN102651337A2012-08-29
US20140239267A12014-08-28
Attorney, Agent or Firm:
MING & YUE INTELLECTUAL PROPERTY LAW FIRM (Suite 611, 6/F Block 206, Nanyou Second Industrial Zone ,No.21 Dengliang Road, Nansha, Shenzhen Guangdong 4, 518054, CN)
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