Title:
COPPER ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/221770
Kind Code:
A1
Abstract:
This copper alloy bonding wire for a semiconductor device achieves improvement in the ball bond life in high temperature, high humidity environments. This semiconductor device bonding wire is characterized by containing a 0.03-3 mass% total of one or more elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir and Pt (first elements), the remainder being Cu and unavoidable impurities. By containing a prescribed amount of the first elements, the occurrence of intermetallic compounds, prone to corrosion in high temperature high humidity environments, is suppressed in the wire bonding interface, and ball bond life is improved.
More Like This:
Inventors:
ODA DAIZO (JP)
YAMADA TAKASHI (JP)
ETO MOTOKI (JP)
HAIBARA TERUO (JP)
UNO TOMOHIRO (JP)
YAMADA TAKASHI (JP)
ETO MOTOKI (JP)
HAIBARA TERUO (JP)
UNO TOMOHIRO (JP)
Application Number:
PCT/JP2017/021825
Publication Date:
December 28, 2017
Filing Date:
June 13, 2017
Export Citation:
Assignee:
NIPPON MICROMETAL CORP (JP)
NIPPON STEEL & SUMIKIN MAT CO (JP)
NIPPON STEEL & SUMIKIN MAT CO (JP)
International Classes:
H01L21/60; C22C9/00; C22C9/04; C22C9/06
Domestic Patent References:
| WO2015163297A1 | 2015-10-29 |
Foreign References:
| JP2008085319A | 2008-04-10 | |||
| JP2008085320A | 2008-04-10 | |||
| JP2015002213A | 2015-01-05 | |||
| JP5893230B1 | 2016-03-23 | |||
| JP2016517623A | 2016-06-16 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
Download PDF: