COPPER ALLOY FOR ELECTRONIC DEVICES, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICES, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICES

WIPO Patent Application WO/2012/073777

A1

This copper alloy for electronic devices contains 1.3% by atom or more but less than 2.6% by atom of Mg and 6.7-20% by atom (inclusive) of Al with the balance substantially made up of Cu and unavoidable impurities. This method for producing a copper alloy for electronic devices comprises: a heating step for heating a copper starting material to a temperature of 500-1,000°C (inclusive); a quenching step for cooling the heated copper starting material to a temperature of 200°C or less at a cooling rate of 200°C/min or more; and a processing step for processing the quenched copper starting material. The copper starting material is composed of a copper alloy that contains 1.3% by atom or more but less than 2.6% by atom of Mg and 6.7-20% by atom (inclusive) of Al with the balance substantially made up of Cu and unavoidable impurities. This copper alloy rolled material for electronic devices is formed from the above-described copper alloy for electronic devices, and has a Young's modulus (E) in the rolling direction of 125 GPa or less and a 0.2% proof stress (σ0.2) in the rolling direction of 400 MPa or more.

MAKI KAZUNARI (JP)
ITO YUKI (JP)

PCT/JP2011/077011

June 07, 2012

November 24, 2011

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MITSUBISHI MATERIALS CORP (JP)
MAKI KAZUNARI (JP)
ITO YUKI (JP)

C22C9/02; C22C9/01; C22C9/04; C22C9/06; C22F1/08; H01B1/02; C22F1/00; C22F1/02

JP2010053445A	2010-03-11
JPH06100983A	1994-04-12
JPH06100984A	1994-04-12
JP2009228013A	2009-10-08
JP2004225060A	2004-08-12

SHIGA Masatake et al. (JP)
Masatake Shiga (JP)

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