COPPER ALLOY PLATE, METHOD FOR MANUFACTURING SAME, AND ELECTRICAL/ELECTRONIC COMPONENT MEMBER

WIPO Patent Application WO/2021/145043

A1

Provided is a copper alloy plate in which: the alloy composition contains 0.10-0.80 mass% of Cr, and the remainder is Cu and inevitable impurities; the tensile strength is 350-800 MPa; the conductivity is 55-90% IACS; the average crystal grain size A0º in the plate-thickness direction in a cross section S0º cut out in the 0º direction with respect to a rolling direction, the average crystal grain size A45º in the plate-thickness direction in a cross section S45º cut out in the 45º direction, and the average crystal grain size A90º in the plate-thickness direction in a cross section S90º cut out in the 90º direction are all equal to or less than 10.0 µm; the average value of the standard deviation of A0º, the standard deviation of A45º, and the standard deviation of A90º is equal to or less than 2.0 μm; and the anisotropy B0º of the average crystal grain size A0º, the anisotropy B45º of the average crystal grain size A45º, and the anisotropy B90º of the average crystal grain size A90º, which are represented by formula (1), are all equal to or less than 10.0%. In formula (1), m is 0º, 45º, or 90º and C is the average value of A0º, A45º, and A90º, that is,(A0º+A45º+A90º)/3.　Formula (1): Bm=100×(Am-C)/C

AKIYA SHUNTA (JP)
SASAKI TAKAHIRO (JP)
KAWATA SHINGO (JP)
HIGUCHI MASARU (JP)

PCT/JP2020/039830

July 22, 2021

October 23, 2020

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FURUKAWA ELECTRIC CO LTD (JP)

B21B3/00; B21B1/22; B21D19/08; B21D28/10; C22C9/00; C22C9/02; C22C9/04; C22C9/06; C22C9/10; C22F1/00; C22F1/02; C22F1/08; H01B1/02

WO2016093349A1	2016-06-16
WO2012026611A1	2012-03-01

JP2010126783A	2010-06-10
JP2006283106A	2006-10-19

SAITO Takuya et al. (JP)

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