Title:
COPPER MATERIAL FOR HIGH-PURITY COPPER SPUTTERING TARGET, AND HIGH-PURITY COPPER SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2015/005348
Kind Code:
A1
Abstract:
This copper material for a high-purity copper sputtering target is such that the purity of Cu excluding O, H, N, and C is in a range of 99.999980 to 99.999998 mass%, the Al content is 0.005 mass ppm or less, and the Si content is 0.05 mass ppm or less.
Inventors:
SAKURAI AKIRA (JP)
GU YU (JP)
SATO YUJI (JP)
KUMAGAI SATOSHI (JP)
GU YU (JP)
SATO YUJI (JP)
KUMAGAI SATOSHI (JP)
Application Number:
PCT/JP2014/068198
Publication Date:
January 15, 2015
Filing Date:
July 08, 2014
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C25C1/12; C23C14/34; H01L21/28; H01L21/285; C22C9/00
Domestic Patent References:
| WO2005073434A1 | 2005-08-11 | |||
| WO2006134724A1 | 2006-12-21 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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