Title:
COPPER OXIDE THIN FILM STRUCTURE USING FLAWLESS SINGLE CRYSTAL COPPER THIN FILM, AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/004280
Kind Code:
A1
Abstract:
The prevent invention provides a copper oxide thin film structure using a flawless single crystal copper thin film, and a manufacturing method therefor, and is technically characterized by comprising: a transparent substrate; a first copper oxide layer formed on an upper portion of the transparent substrate and having particular directivity; and a second copper oxide layer formed on an upper portion of the first copper oxide layer to prevent the first copper oxide layer from being peroxidized and protect the same from external damage and having particular directivity. Therefore, the present invention shows the effect that a copper oxide thin film manufactured by use of a flawless single crystal copper thin film has the effect of being produced at high yield; and a high-quality copper oxide thin film having greatly improved optical and electrical characteristic and mechanical stability can be manufactured and provided.
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Inventors:
JEONG SE-YOUNG (KR)
Application Number:
PCT/KR2017/006918
Publication Date:
January 04, 2018
Filing Date:
June 29, 2017
Export Citation:
Assignee:
PUSAN NATIONAL UNIV INDUSTRIAL-UNIV COOPERATION FOUNDATION (KR)
International Classes:
H01L21/16; C23C8/10; C23C14/18; C23C14/34; C23C14/58; H01L21/02; H01L21/28; H01L21/324
Foreign References:
| KR101541517B1 | 2015-08-03 | |||
| JP2006009083A | 2006-01-12 | |||
| KR101512236B1 | 2015-04-16 | |||
| JP5247448B2 | 2013-07-24 | |||
| KR20120079803A | 2012-07-13 |
Attorney, Agent or Firm:
PUKYUNG INTERNATIONAL PATENT AND LAW FIRM (KR)
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