Title:
COPPER PILLAR BUMP STRUCTURE AND FABRICATING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/103708
Kind Code:
A1
Abstract:
A copper pillar bump structure on a copper pillar on a metal pad of a semiconductor device and a method of fabricating thereof are disclosed. The copper pillar bump structure includes: a metal barrier layer formed on the copper pillar. The metal barrier layer has a U-shaped cross section, a central portion of the metal barrier layer covers the top surface of the copper pillar, an opening of the U-shaped cross section faces away from the copper pillar. The copper pillar bump structure further includes a solder layer on the copper pillar and filling the U-shaped cross section. The copper pillar bump structure provides a metal barrier layer having a U-shaped cross section and fills a solder layer in the U-shaped cross section, the metal barrier layer wraps sides of the solder layer, which can improve the non-wetting problem caused by insufficient tin, or the solder bridging problem caused by excessive solder, during a flip die soldering process.
Inventors:
CHUANG LING-YI (CN)
LIN DINGYOU (CN)
LIN DINGYOU (CN)
Application Number:
PCT/CN2019/116787
Publication Date:
May 28, 2020
Filing Date:
November 08, 2019
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/48; H01L23/498; H01L21/768; H01L23/538
Foreign References:
| CN209119091U | 2019-07-16 | |||
| US20130313707A1 | 2013-11-28 | |||
| CN106486444A | 2017-03-08 | |||
| CN105374775A | 2016-03-02 | |||
| US20130292827A1 | 2013-11-07 |
Attorney, Agent or Firm:
SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
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