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Patent Searching and Data


Title:
COPPER PLATING ADDITIVE FOR SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2021/128417
Kind Code:
A1
Abstract:
The present invention relates to the field of electroplating, and specifically relates to a copper plating additive for a semiconductor. Preparation raw materials of the additive at least comprise a component A; and by mass concentration meter the component A comprises 10-60 g/L of polyethylene glycol, 0.01-1 g/L of copper salt, 1-10 g/L of inorganic acid and ultrapure water. In the copper plating additive for a semiconductor prepared in the present invention, holes and gaps generated during electroplating of a surface of a channel having a 40-80 nm width and a 150-250 nm depth may be avoided, micropore filling efficiency may be effectively improved, and working time is reduced; meanwhile, the thickness of a plating layer is reduced; the copper deposition rate may be increased, a large amount of accumulation is avoided, and grains are refined at the same time as electroplating efficiency is improved; in addition, a local protrusion on a surface of the plating layer is avoided while holes generated during channel surface electroplating may be reduced. The production process is relatively simple, reaction conditions are normal temperature and normal pressure conditions, and discharge of "the three wastes" is relatively low during the production process.

Inventors:
LIU XIAOXIA (CN)
ZOU WENTAO (CN)
LU WENFENG (CN)
LI MULONG (CN)
XIE WEI (CN)
XU BO (CN)
Application Number:
PCT/CN2019/130617
Publication Date:
July 01, 2021
Filing Date:
December 31, 2019
Export Citation:
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Assignee:
JIANGSU SAFEST SEMICONDUCTOR MATERIAL TESTING TECH CO LTD (CN)
International Classes:
C25D3/38; C25D7/12
Foreign References:
CN109609983A2019-04-12
CN109371437A2019-02-22
CN101481812A2009-07-15
CN110016699A2019-07-16
CN1296375A2001-05-23
JP2017106093A2017-06-15
Attorney, Agent or Firm:
SHANGHAI WEICE INTELLECTUAL PROPERTY AGENCY (GENERAL PARTNERSHIP) (CN)
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