COPPER POWDER AND METHOD FOR MANUFACTURING SAME - DOWA ELECTRONICS MATERIALS CO

Title:

COPPER POWDER AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2018/123809

Kind Code:

A1

Abstract:

Provided are an inexpensive copper powder and a method for manufacturing the same, the copper powder having a low oxygen content despite having a small particle diameter, and the copper powder having a high shrinkage initiation temperature when heated. In the present invention, high-pressure water is blown in a non-oxidizing atmosphere into molten copper heated to a temperature 250-700°C (preferably 350-650°C, and more preferably 450-600°C) higher than the melting point of copper while the molten copper is dropped, and the molten copper is rapidly solidified, whereby a copper powder having an average particle diameter of 1-10 µm, a crystalline diameter Dx(200) in the (200) face of 40 nm or greater, and an oxygen content of 0.7% by mass or less is manufactured.

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Inventors:

YOSHIDA MASAHIRO (JP)
INOUE KENICHI (JP)
EBARA ATSUSHI (JP)
MICHIAKI YOSHIYUKI (JP)
YAMADA TAKAHIRO (JP)

Application Number:

PCT/JP2017/045934

Publication Date:

July 05, 2018

Filing Date:

December 21, 2017

Export Citation:

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Assignee:

DOWA ELECTRONICS MATERIALS CO (JP)

International Classes:

B22F9/08; B22F1/05

Domestic Patent References:

WO2016157762A1

2016-10-06

Foreign References:

JP2008095169A	2008-04-24
JP2012140661A	2012-07-26
JPH083486A	1996-01-09
JPH11264001A	1999-09-28
JP2016141817A	2016-08-08
JP2004124257A	2004-04-22
JP2007263860A	2007-10-11

Other References: