Title:
CPP-GMR ELEMENT, TMR ELEMENT, AND MAGNETIC RECORDING/REPRODUCTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/050125
Kind Code:
A1
Abstract:
At present, the standard antiferromagnetic film in the industry may be an Mn80Ir20 film of irregular phase and an Mn75Ir25 film of regular phase. However, both of the films have a crystal structure as a cubic crystal having a crystal magnetic anisotropy energy constant as small as 105 erg/cm3 and insufficient resistance against thermal fluctuation. There is a problem of so-called pin degradation.
In order to solve the problem, an L10Mn50Ir50 film having the crystal magnetic anisotropy energy constant of about 2 × 108 erg/cm3 is employed as the antiferromagnetic film (300) for a fixed layer. This assures the relaxation time of 1.2 × 1049 years and resistance of an astronomical value against the thermal fluctuation even if, for example, the element size is 5 nm□ and the antiferromagnetic film thickness is 5 nm. As for the low-temperature ordering means for the L10Mn50Ir50-based antiferromagnetic film, the problem may be solved by arranging below the Mn50Ir50 film, a low-temperature ordered MnIr layer driven by dynamic stress/static stress.
Inventors:
SOEYA, Susumu (HITACHI LTD., 280, Higashikoigakubo 1-chome, Kokubunji-sh, Tokyo 01, 〒1858601, JP)
Application Number:
JP2009/005183
Publication Date:
May 06, 2010
Filing Date:
October 06, 2009
Export Citation:
Assignee:
HITACHI, LTD. (6-6 Marunouchi 1-chome, Chiyoda-ku Tokyo, 80, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
International Classes:
H01L43/08; G11B5/39; H01L21/8246; H01L27/105; H01L43/10
Attorney, Agent or Firm:
Polaire I.P.C. (7-1Hatchobori 2-chome, Chuo-ku Tokyo, 32, 〒1040032, JP)
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