Title:
CR ALLOY TARGET MATERIAL
Document Type and Number:
WIPO Patent Application WO/2018/131328
Kind Code:
A1
Abstract:
Provided is a Cr alloy target material with which formation of craters on the surface of the Cr alloy target material during film formation can be limited and the adhesion of droplets on the material being treated can be limited. The Cr alloy target material is represented by an atom ratio composition formula of Cr100-x-yM1xM2y, wherein 0.1≤x≤21.0, 0.1≤y≤23.0, M1 is at least one kind of element selected from Ti and V, and M2 is at least one kind of element selected from Mo, Mn, B, W, Nb and Ta, with the balance being unavoidable impurities. The Cr alloy target material contains 10-1000 mass ppm of oxygen as an unavoidable impurity.
Inventors:
SAKAMAKI KOICHI (JP)
SAITO KAZUYA (JP)
SOGAME HIROAKI (JP)
SAITO KAZUYA (JP)
SOGAME HIROAKI (JP)
Application Number:
PCT/JP2017/043547
Publication Date:
July 19, 2018
Filing Date:
December 05, 2017
Export Citation:
Assignee:
HITACHI METALS LTD (JP)
International Classes:
C23C14/34; C22C27/06; B22F3/10; B22F3/14; B22F3/15; C22C1/04
Foreign References:
| JP2005336611A | 2005-12-08 | |||
| JP2000199055A | 2000-07-18 | |||
| JP2003226963A | 2003-08-15 | |||
| JP2011252227A | 2011-12-15 | |||
| JPH08269700A | 1996-10-15 | |||
| JP2000038662A | 2000-02-08 | |||
| JP2012237056A | 2012-12-06 | |||
| JP2003226963A | 2003-08-15 |
Other References:
See also references of EP 3569731A4
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