Title:
CRITICAL DIMENSION VARIATION COMPENSATION ACROSS A WAFER BY MEANS OF LOCAL WAFER TEMPERATURE CONTROL
Document Type and Number:
WIPO Patent Application WO2004077505
Kind Code:
A3
Abstract:
An etching system for etching a wafer of a material has a measuring device, an etching chamber, and a controller. The measuring device measures the critical dimension test feature (CD) along the profile of the wafer at a plurality of preset locations. The etching chamber receives the wafer from the measuring device. The etching chamber includes a chuck supporting the wafer and a plurality of heating elements disposed within the chuck. Each heating element is positioned adjacent to each preset location on the wafer. The etching system controller is coupled to the measuring device to receive the actual measured CD's for a particular wafer. The etching system controller is also connected to the plurality of heating elements. The controller adjusts the temperature of each heating element during a process to reduce the variation of critical dimensions among the plurality of preset locations by using temperature dependent etching characteristics of the etch process to compensate for CD variation introduced by the lithography process preceding the etch process.
Inventors:
STEGER ROBERT J (US)
Application Number:
PCT/US2004/004134
Publication Date:
March 31, 2005
Filing Date:
February 12, 2004
Export Citation:
Assignee:
LAM RES CORP (US)
STEGER ROBERT J (US)
STEGER ROBERT J (US)
International Classes:
F27B5/14; F27B17/00; F27D19/00; F27D21/00; F27D99/00; H01J37/32; H01L21/00; H01L21/306; H01L; (IPC1-7): H01J37/32
Domestic Patent References:
| WO2001029873A1 | 2001-04-26 |
Foreign References:
| US5200023A | 1993-04-06 | |||
| EP0741406A2 | 1996-11-06 | |||
| US6136721A | 2000-10-24 |
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