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Title:
CROSS-POINT VARIABLE-RESISTANCE NONVOLATILE STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/152061
Kind Code:
A1
Abstract:
Provided is a multilayer cross-point variable-resistance nonvolatile storage device made up of memory cells that are formed in the same direction such that the characteristics in each layer become stable. The memory cells (51) are formed in the positions of intersection between bit lines (53) arranged in the X direction and word lines (52) arranged in the Y direction, the bit lines and the word lines being formed in multiple layers. In a multilayer cross-point structure in which a plurality of vertical array planes that are provided for the respective groups of bit lines aligned in the Z direction and that share the word lines are lined up in the Y direction, the switching of electrical connection/disconnection between the even-numbered-layer bit lines, which are commonly connected, and a global bit line (56) is controlled by an even-numbered-layer bit-line selection switch element (57), and the switching of electrical connection/disconnection between the odd-numbered-layer bit lines, which are commonly connected, and the global bit line is controlled by an odd-numbered-layer bit-line selection switch element (58). A bidirectional current-limiting circuit (920) made by connecting a P-type current-limiting element (91) and an N-type current-limiting element (90) in parallel is provided between the even-numbered-layer bit-line selection switch element (57) and the odd-numbered-layer bit-line selection switch element (58), and the global bit line (56).

Inventors:
AZUMA, Ryotaro (())
東 亮太郎 (())
Application Number:
JP2011/003125
Publication Date:
December 08, 2011
Filing Date:
June 02, 2011
Export Citation:
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Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真1006番地 Osaka, 〒5718501, JP)
AZUMA, Ryotaro (())
International Classes:
G11C13/00; H01L27/10; H01L45/00; H01L49/00
Attorney, Agent or Firm:
NII, Hiromori (6F Tanaka Ito Pia Shin-Osaka Bldg.,3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-cit, Osaka 11, 〒5320011, JP)
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Claims: