Title:
CRUCIBLE FOR GROWING SAPPHIRE SINGLE CRYSTAL, AND METHOD FOR PRODUCING CRUCIBLE FOR GROWING SAPPHIRE SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2014/050585
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a crucible for growing a sapphire single crystal, which is optimized for producing a sapphire single crystal and can be re-used. The crucible for growing a sapphire single crystal according to the present invention is equipped with a base material (3) which contains molybdenum as the main component and has a crucible-like shape and a coating layer (5) which is coated only on the inner periphery of the base material (3) and is composed of tungsten and unavoidable impurities, wherein the coating layer (5) has a surface roughness (Ra) of 5 to 20 μm inclusive.
Inventors:
KATOH MASAHIRO (JP)
WATANABE MAKOTO (JP)
WATANABE MAKOTO (JP)
Application Number:
PCT/JP2013/074641
Publication Date:
April 03, 2014
Filing Date:
September 12, 2013
Export Citation:
Assignee:
ALMT CORP (JP)
International Classes:
C30B29/20; C30B11/00; F27B14/10
Foreign References:
| JPH0625855A | 1994-02-01 | |||
| JP2012107782A | 2012-06-07 | |||
| JPH07102376A | 1995-04-18 | |||
| JP2004299927A | 2004-10-28 | |||
| JP2005158971A | 2005-06-16 |
Attorney, Agent or Firm:
IKEDA, Noriyasu et al. (JP)
Noriyasu Ikeda (JP)
Noriyasu Ikeda (JP)
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