CRUCIBLE FOR GROWING SAPPHIRE SINGLE CRYSTAL AND METHOD FOR GROWING SAPPHIRE SINGLE CRYSTAL

Title:

CRUCIBLE FOR GROWING SAPPHIRE SINGLE CRYSTAL AND METHOD FOR GROWING SAPPHIRE SINGLE CRYSTAL

Document Type and Number:

WIPO Patent Application WO/2014/148158

Kind Code:

A1

Abstract:

The present invention addresses the problem of providing a crucible for growing a sapphire single crystal, said crucible having a structure which enables the cost to be reduced from that of conventional sapphire growth. The crucible for growing a sapphire single crystal according to the present invention is configured from tungsten and inevitable impurities, or configured from a tungsten-molybdenum alloy containing 3-60 mass% of tungsten, and inevitable impurities. The crucible includes a cylinder part and a bottom part that is contiguous with the cylinder part without a seam. At least the inner circumference has a maximum height (Ry) of equal to or less than 7μm and a surface arithmetic-average-roughness (Ra) of equal to or less than 1μm.

Inventors:

WATANABE MAKOTO (JP)
KATOH MASAHIRO (JP)
FUKAYA YOSHITAKE (JP)

Application Number:

PCT/JP2014/053309

Publication Date:

September 25, 2014

Filing Date:

February 13, 2014

Export Citation:

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Assignee:

ALMT CORP (JP)

International Classes:

C22C27/04; B22F1/00; B22F3/24; B22F5/00; C30B29/20

Foreign References:

JP2011127839A	2011-06-30
JP2012107782A	2012-06-07
JP2011127150A	2011-06-30

Attorney, Agent or Firm:

IKEDA, Noriyasu et al. (JP)
Noriyasu Ikeda (JP)

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