Title:
CRUCIBLE FOR USE IN GROWING SAPPHIRE SINGLE CRYSTAL AND METHOD FOR GROWING SAPPHIRE SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2014/148157
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a crucible which is for use in growing a sapphire single crystal and which has a structure that can inhibit molten sapphire from being contaminated with a component of the crucible. This crucible for use in growing a sapphire single crystal has a cylindrical inner vessel which consists either of molybdenum and unavoidable impurities or of a tungsten-molybdenum alloy having a tungsten content of 0.1 to 60 mass% and unavoidable impurities and which has a bottom that has a thickness of 0.3 to 2mm and that is integrally formed so as to form a bottomed cylindrical vessel having no seam anywhere between the opening part and the bottom.
Inventors:
FUKAYA YOSHITAKE (JP)
WATANABE MAKOTO (JP)
WATANABE MAKOTO (JP)
Application Number:
PCT/JP2014/053300
Publication Date:
September 25, 2014
Filing Date:
February 13, 2014
Export Citation:
Assignee:
ALMT CORP (JP)
International Classes:
C30B29/20; C22C1/04; C22C27/04; C30B15/10; F27B14/10
Foreign References:
| JP2008007353A | 2008-01-17 | |||
| JP2008007354A | 2008-01-17 | |||
| JP2011126731A | 2011-06-30 | |||
| JP2011236088A | 2011-11-24 | |||
| JP2012107782A | 2012-06-07 | |||
| JP2011127150A | 2011-06-30 | |||
| JP2010270345A | 2010-12-02 | |||
| JPH09196570A | 1997-07-31 |
Attorney, Agent or Firm:
IKEDA, Noriyasu et al. (JP)
Noriyasu Ikeda (JP)
Noriyasu Ikeda (JP)
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