Title:
CRUSHED POLYCRYSTALLINE SILICON LUMPS AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2019/189001
Kind Code:
A1
Abstract:
[Problem] To obtain crushed polycrystalline silicon lumps from which tungsten and/or cobalt, which are derived from the material of a crushing tool and cause unavoidable contamination, have been removed to a high degree. [Solution] Provided are crushed polycrystalline silicon lumps characterized in that: the surface metal concentration is 15.0 pptw or less, preferably 7.0 to 13.0 pptw; and of the surface metal concentration, the surface tungsten concentration is 0.9 pptw or less, preferably 0.40 to 0.85 pptw, and the surface cobalt concentration is 0.3 pptw or less, preferably 0.04 to 0.08 pptw.
Inventors:
NISHIMURA SHIGEKI (JP)
Application Number:
PCT/JP2019/012542
Publication Date:
October 03, 2019
Filing Date:
March 25, 2019
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C01B33/02; B02C25/00
Domestic Patent References:
| WO2015122455A1 | 2015-08-20 |
Foreign References:
| JP2016070873A | 2016-05-09 | |||
| JP2013129593A | 2013-07-04 | |||
| JP2014031309A | 2014-02-20 | |||
| CN101319367A | 2008-12-10 | |||
| JP2011095268A | 2011-05-12 | |||
| JP2006192423A | 2006-07-27 | |||
| JP2009531172W | ||||
| JPH0621034A | 1994-01-28 | |||
| JP2010536698W | ||||
| JP2014031309A | 2014-02-20 |
Other References:
See also references of EP 3760585A4
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
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