Title:
CRYSTAL GROWING METHOD AND CRYSTAL GROWING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2000/009785
Kind Code:
A1
Abstract:
A crystal growing apparatus comprises a solid-state device (42) having a region (42a) where valence electrons are so controlled that the density of holes or electrons in the surface portion is controlled according to the environment of a solution (43) containing a polymer compound, a pair of opposed electrodes (44a, 44b) on both sides of the space above the region (42a), and electrical insulating members (46a, 46b) supporting the electrodes (44a, 44b). The region (42a) is an impurity region formed on a silicon semiconductor substrate. A crystal growing method comprises applying an electric field to a solution (43) through opposed electrodes (44a, 44b). A crystal of a polymer compound is grown in the solution (43) in the electric field in an electric state given to the surface of a region (42a).
Inventors:
SANJOH AKIRA (JP)
Application Number:
PCT/JP1999/004360
Publication Date:
February 24, 2000
Filing Date:
August 11, 1999
Export Citation:
Assignee:
SUMITOMO METAL IND (JP)
SANJOH AKIRA (JP)
SANJOH AKIRA (JP)
International Classes:
C08J3/00; B01D9/02; C30B7/00; C30B29/58; (IPC1-7): C30B29/58; C07H21/00; C07K1/14; C08H1/00; C12N9/00
Domestic Patent References:
| WO1998002601A1 | 1998-01-22 | |||
| WO1997049845A1 | 1997-12-31 | |||
| WO1996026781A1 | 1996-09-06 |
Other References:
See also references of EP 1114886A4
Attorney, Agent or Firm:
Fukami, Hisao (Minamimori-machi 2-chome Kita-ku Osaka-shi, Osaka, JP)
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