CRYSTAL GROWING METHOD AND CRYSTAL GROWING APPARATUS

Title:

CRYSTAL GROWING METHOD AND CRYSTAL GROWING APPARATUS

Document Type and Number:

WIPO Patent Application WO/2000/009786

Kind Code:

A1

Abstract:

A crystal growing apparatus comprises a solid-state device (22) having a region (22a) where valence electrons are so controlled that the density of holes or electrons in the surface portion is controlled according to the environment of a solution (23) containing a polymer compound and a heat-generating device (24) disposed near the region (22a). The region (22a) is an impurity region formed on a silicon semiconductor substrate. The heat-generating device (24) includes a Cr heating wire. A crystal growing method comprises heating a solution (23) by means of a heat-generating device (24). A crystal of a polymer compound is grown in the heated solution (23) in an electric state given to the surface of a region (22a).

Inventors:

SANJOH AKIRA (JP)

Application Number:

PCT/JP1999/004361

Publication Date:

February 24, 2000

Filing Date:

August 11, 1999

Export Citation:

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Assignee:

SUMITOMO METAL IND (JP)
SANJOH AKIRA (JP)

International Classes:

C08J3/00; C30B7/00; C30B29/58; (IPC1-7): C30B29/58; C07H21/00; C07K1/14; C08H1/00; C12N9/00

Domestic Patent References:

WO1998002601A1	1998-01-22
WO1997049845A1	1997-12-31
WO1996026781A1	1996-09-06

Other References: