Title:
CRYSTALLINE DEFECT EVALUATION METHOD
Document Type and Number:
WIPO Patent Application WO/2018/047590
Kind Code:
A1
Abstract:
The present invention provides a crystalline defect evaluation method for evaluating the distribution of a crystalline defect present in a silicon wafer, the crystalline defect evaluation method characterized by: forming an oxide film with the same thickness as the size of a crystalline defect to be evaluated on the silicon wafer, measuring a GOI characteristic of the silicon wafer, and determining the crystalline defect distribution of the crystalline defect size to be evaluated in the silicon wafer from a GOI characteristic measurement result, assuming that in an area in which the GOI characteristic is decreased, a crystalline defect of a size comparable to the thickness of the oxide film is present. Thus, the crystalline defect evaluation method makes it possible to determine the crystalline defect distribution even for a crystalline defect size of not more than 10 nm.
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Inventors:
SAITO HISAYUKI (JP)
Application Number:
PCT/JP2017/029419
Publication Date:
March 15, 2018
Filing Date:
August 16, 2017
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/66; C30B29/06
Foreign References:
| JP2015154065A | 2015-08-24 | |||
| JP2016103528A | 2016-06-02 | |||
| JP2010056264A | 2010-03-11 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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