Title:
CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR FORMING CRYSTALLINE GALLIUM NITRIDE
Document Type and Number:
WIPO Patent Application WO2001024921
Kind Code:
A9
Abstract:
A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride (15); providing mineralizer (17); providing solvent (17); providing a capsule (10); disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell (1); and subjecting the pressure cell to high pressure and high tempeature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and re-precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention.
Inventors:
D EVELYN MARK PHILIP
NARANG KRISTI JEAN
NARANG KRISTI JEAN
Application Number:
PCT/US2000/026704
Publication Date:
October 03, 2002
Filing Date:
September 28, 2000
Export Citation:
Assignee:
GEN ELECTRIC (US)
International Classes:
B01D9/02; B01J3/00; B01J3/06; C30B7/10; C30B29/38; (IPC1-7): B01J3/06; C01G15/00
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