Title:
CRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, LAMINATE MANUFACTURING METHOD, THIN FILM TRANSISTOR, THIN FILM TRANSISTOR MANUFACTURING METHOD, ELECTRONIC DEVICE, AND IN-VEHICLE DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/143073
Kind Code:
A1
Abstract:
A crystalline oxide semiconductor thin film that has indium oxide as a primary component, includes surface crystal particles with a single crystal orientation, and has a band gap of 3.90eV or greater.
Inventors:
INOUE KAZUYOSHI (JP)
SHIBATA MASATOSHI (JP)
TSURUMA YUKI (JP)
KAWASHIMA EMI (JP)
TAKESHIMA MOTOHIRO (JP)
SHIBATA MASATOSHI (JP)
TSURUMA YUKI (JP)
KAWASHIMA EMI (JP)
TAKESHIMA MOTOHIRO (JP)
Application Number:
PCT/JP2018/002432
Publication Date:
August 09, 2018
Filing Date:
January 26, 2018
Export Citation:
Assignee:
IDEMITSU KOSAN CO (JP)
International Classes:
C23C14/08; C04B35/01; H01L21/363; H01L29/786
Domestic Patent References:
| WO2017017966A1 | 2017-02-02 |
Foreign References:
| JP2012253315A | 2012-12-20 | |||
| JP2012253327A | 2012-12-20 | |||
| JP2016201458A | 2016-12-01 |
Attorney, Agent or Firm:
KINOSHITA & ASSOCIATES (JP)
Download PDF: