CTIA READOUT CIRCUIT ADAPTED TO TWO-DIMENSIONAL PHOTOCONDUCTIVE DETECTOR

WIPO Patent Application WO/2024/082745

A1

The present invention relates to the technical field of photoelectric detection, and in particular to a CTIA readout circuit adapted to a two-dimensional photoconductive detector. According to the present invention, the photoconductive detector is a two-port device taking a two-dimensional material as a channel, photosensitive devices are used as photosensitive pixels, devices having undergone light shielding processing are used as blind pixels, the photosensitive pixels are connected to an adjustable compensation resistor in series, and the photosensitive pixels and the blind pixels match each other to serve as an input stage of a rear CTIA circuit. The CTIA readout circuit is composed of a high-gain operational amplifier, a gear-adjustable integral capacitor Cint, and a capacitor reset switch Rst. The operational amplifier is of a two-stage operational amplifier structure. The present invention solves the problem that, at present, it is difficult to combine a semiconductor other than silicon with a silicon-based circuit. A CTIA injection stage uses a two-stage operational amplifier, so that the circuit gain is greatly improved, and a gear-adjustable integral capacitor is used, so that the adaptability of coupling of the readout circuit to photoelectric detectors of different types and different performance is improved. Moreover, the present invention has the advantages of small unit circuit area and high integration level.

BAO WENZHONG (CN)
WANG XINYU (CN)
CHEN HONGLEI (CN)
LIU KANG (CN)

PCT/CN2023/108774

April 25, 2024

July 23, 2023

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FUDAN UNIV (CN)

H03F1/14; H03F3/08; H03F3/45

SHANGHAI EAST ASIA PATENT & TRADEMARK AGENCY CO., LTD. (CN)

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