Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME

Title:

Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2016/006600

Kind Code:

A1

Abstract:

　This Cu-Ga alloy sputtering target has a component composition containing 0.1-40.0% (atom basis) of Ga with the remainder made up by Cu and unavoidable impurities, wherein the porosity of the target is 3.0% or less, the average diameter of inscribed circles of the pores is 150 μm or less, and the average crystal grain diameter of Cu-Ga alloy grains is 50 μm or less.

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Inventors:

UMEMOTO KEITA (JP)
ZHANG SHOUBIN (JP)

Application Number:

PCT/JP2015/069510

Publication Date:

January 14, 2016

Filing Date:

July 07, 2015

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Assignee:

MITSUBISHI MATERIALS CORP (JP)

International Classes:

C23C14/34; B22F1/142; C22C9/00; C22C28/00; C22F1/00

Foreign References:

JP2012102358A	2012-05-31
JP2012201948A	2012-10-22
JP2013079411A	2013-05-02
JP2012233230A	2012-11-29
JP2013199704A	2013-10-03
JP2013142175A	2013-07-22
JP2014019934A	2014-02-03
JP2014181390A	2014-09-29

Attorney, Agent or Firm:

SHIGA Masatake et al. (JP)
Masatake Shiga (JP)

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