Title:
Cu-Ga BINARY SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2014/061697
Kind Code:
A1
Abstract:
Provided are: a Cu-Ga binary sputtering target having superior machining characteristics as well as high transverse strength at a high density; and a method for producing same. The sputtering target has a constituent composition containing 28-35 atom% of Ga, the remainder comprising Cu and unavoidable impurities, and furthermore has a coexisting structure such that a low-Ga-content Cu-Ga binary alloy phase having no greater than 26 atom % of Ga, the remainder comprising Cu, is enveloped by a high-Ga-content Cu-Ga binary alloy phase having at least 28 atom% of Ga.
Inventors:
UMEMOTO KEITA (JP)
ZHANG SHOUBIN (JP)
ZHANG SHOUBIN (JP)
Application Number:
PCT/JP2013/078067
Publication Date:
April 24, 2014
Filing Date:
October 16, 2013
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; B22F1/00; B22F3/10; B22F3/14; B22F3/15; C22C1/04; C22C9/00
Foreign References:
| JP2012193423A | 2012-10-11 | |||
| JP2011149039A | 2011-08-04 | |||
| JP2011117077A | 2011-06-16 | |||
| JP2011214140A | 2011-10-27 | |||
| JP2012082498A | 2012-04-26 | |||
| JP2010265544A | 2010-11-25 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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