Title:
CU-GA ALLOY, AND CU-GA ALLOY SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2012/005098
Kind Code:
A1
Abstract:
Disclosed is a Cu-Ga alloy which comprises 25-30 mass% of Ga and a reminder made up by Cu, and which is characterized in that a γ-phase (that is a phase having a Ga concentration appearing on a structure image obtained on an electron microscope of 30-35 mass%) has an average equivalent circle diameter of 50 μm or less and a largest equivalent circle diameter of 200 μm or less. The Cu-Ga alloy rarely undergoes breakage, cracking or the like even when produced by a casting method due to the specific phase structure contained in the structure thereof, and therefore the alloy can be subjected to rolling processing in spite of a fact that the alloy contains Ga at a concentration as high as 25-30 mass%. Therefore, it becomes possible to produce a sputtering target having a high Ga content by rolling, and the productivity of the sputtering target can be improved. When the Cu-Ga alloy is produced by a casting method, the sputtering rate becomes higher compared with that for a Cu-Ga alloy sputtering target that is produced by a powder sintering method such as hot pressing.
Inventors:
YANO, Tomoyasu (Engineered Materials Sector, PVD Materials Division, 2081, Oaza Tohsen, Omuta-sh, Fukuoka 03, 〒8360003, JP)
Application Number:
JP2011/063802
Publication Date:
January 12, 2012
Filing Date:
June 16, 2011
Export Citation:
Assignee:
MITSUI MINING & SMELTING CO., LTD. (1-11-1, Osaki Shinagawa-k, Tokyo 84, 〒1418584, JP)
三井金属鉱業株式会社 (〒84 東京都品川区大崎一丁目１１番１号 Tokyo, 〒1418584, JP)
三井金属鉱業株式会社 (〒84 東京都品川区大崎一丁目１１番１号 Tokyo, 〒1418584, JP)
International Classes:
C22C9/00; B21B3/00; B22D21/00; C23C14/34
Attorney, Agent or Firm:
SSINPAT PATENT FIRM (Gotanda Yamazaki Bldg. 6F, 13-6 Nishigotanda 7-chome, Shinagawa-k, Tokyo 31, 〒1410031, JP)
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