Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
CU-GA ALLOY SPUTTERING TARGET, AND METHOD FOR MANUFACTURING CU-GA ALLOY SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2019/124351
Kind Code:
A1
Abstract:
This Cu-Ga alloy sputtering target has a composition containing Ga in an amount of 20-40 atomic% as a metal component, and further containing Na and K in a total amount of 0.05-1.0 atomic%, the balance comprising Cu and unavoidable impurities, wherein alkali metal salt particles composed of a sodium salt or a potassium salt are dispersed in a Cu-Ga alloy matrix, and the alkali metal salt particles have a maximum particle size of 30 μm or less and a relative density of 97% or more.

Inventors:
MORI Satoru (600 Kitabukuro-cho 1-chome, Omiya-ku, Saitama-sh, Saitama 08, 〒3308508, JP)
TAKEDA Takuma (Central Research Institute 1002-14, Mukohyama, Naka-sh, Ibaraki 02, 〒3110102, JP)
Application Number:
JP2018/046519
Publication Date:
June 27, 2019
Filing Date:
December 18, 2018
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
MITSUBISHI MATERIALS CORPORATION (2-3 Marunouchi 3-chome, Chiyoda-ku Tokyo, 17, 〒1008117, JP)
International Classes:
C23C14/34; B22F3/10; C22C1/04; C22C1/05; C22C9/00; H01L31/0749
Domestic Patent References:
WO2018021105A12018-02-01
Foreign References:
JP2011117077A2011-06-16
JP2012233230A2012-11-29
JP2016028173A2016-02-25
JP2015030870A2015-02-16
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (1-9-2, Marunouchi Chiyoda-k, Tokyo 20, 〒1006620, JP)
Download PDF: