Title:
CURRENT ACCUMULATION PIXEL STRUCTURE USED FOR CMOS-TDI IMAGE SENSOR
Document Type and Number:
WIPO Patent Application WO/2016/041274
Kind Code:
A1
Abstract:
The present invention relates to the field of analog integrated circuits, and aims to provide for a CMOS image sensor to better perform TDI functions by increasing the horizontal frequency of a CMOS-TDI image sensor, and thus broaden the range of applications of TDI technology. To that end, the technical solution employed by the present invention is: a current accumulation pixel structure used for a CMOS-TDI image sensor, said pixel structure consisting of a photodiode, four MOS transistors M1 to M4, four switches S1 to S4, and two capacitors C1 and C2; the specific connection relationship is as follows: the anode of the photodiode is connected to a ground, and the cathode is connected to an input terminal; the drain and gate of a transistor M1 are both connected to the input terminal, and the source is connected to a power supply VDD. The present invention is applicable primarily to analog integrated circuit design.
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Inventors:
NIE KAIMING (CN)
YAO SUYING (CN)
XU JIANGTAO (CN)
SHI ZAIFENG (CN)
GAO ZHIYUAN (CN)
GAO JING (CN)
YAO SUYING (CN)
XU JIANGTAO (CN)
SHI ZAIFENG (CN)
GAO ZHIYUAN (CN)
GAO JING (CN)
Application Number:
PCT/CN2014/093756
Publication Date:
March 24, 2016
Filing Date:
December 12, 2014
Export Citation:
Assignee:
UNIV TIANJIN (CN)
International Classes:
H04N5/374
Foreign References:
| CN101437119A | 2009-05-20 | |||
| CN103402061A | 2013-11-20 | |||
| CN102611853A | 2012-07-25 |
Attorney, Agent or Firm:
Bei & Ocean (CN)
天津市北洋有限责任专利代理事务所 (CN)
天津市北洋有限责任专利代理事务所 (CN)
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