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Title:
CUSTOMIZED SPAN COMPENSATION OF (SOI PRESSURE) SENSOR WITH LEADOUT RESISTANCE HAVING HEAVY AND LIGHT IMPLANT PORTIONS
Document Type and Number:
WIPO Patent Application WO/2004/104538
Kind Code:
A1
Abstract:
A sensor chip has a piezo-resistive bridge, a first resistor (38) network that can be used for biasing when connected to an external amplifier, a second resistor (44) network that can be used to set gain when connected to the external amplifier (50), and a leadout resistor (34, 36) that connects an output of the bridge to a common summing point of the two resistor networks. The summing point is connected to the non-inverting input of the external amplifier. The leadout resistor has a predetermined number of squares. A portion of the squares has a light implant (36) and the remaining portion of the squares has a heavy implant (34). The ratio of the heavy and light implant portions provides customized span compensation of the amplified output for specific operating temperature ranges. So the same ion implant concentrations common to bulk silicon and SOI sensors can be retained.

Inventors:
Johnson, Russell L. (2150 Greenview Drive, New Brighton, MN, 55112, US)
Application Number:
PCT/US2004/015647
Publication Date:
December 02, 2004
Filing Date:
May 19, 2004
Export Citation:
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Assignee:
HONEYWELL INTERNATIONAL INC. (101 Columbia Road, P.O. Box 2245 Morristown, NJ, 07960, US)
Johnson, Russell L. (2150 Greenview Drive, New Brighton, MN, 55112, US)
International Classes:
G01D3/036; G01L1/22; G01L9/06; G01L9/16; G01L19/04; G01D3/028; G01L1/20; G01L9/06; G01L9/16; G01L19/04; (IPC1-7): G01L1/22; G01D3/036; G01L9/06; G01L19/04
Attorney, Agent or Firm:
Hoiriis, David (Honeywell International Inc, 101 Columbia Avenue P.O. Box 224, Morristown NJ, 07960, US)
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