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Title:
CUTTING METHOD AND EPITAXIAL WAFER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2008/035530
Kind Code:
A1
Abstract:
In a cutting method, a wire is wound and hooked on a roller having a plurality of grooves, the wire is permitted to run to press an ingot while the roller is being supplied with a cutting slurry, and the ingot is cut into wafers. A test of cutting the ingot by supplying the roller with the cutting slurry at a controlled feeding temperature is previously performed, and relation between the axial displacement of the roller and the feeding temperature of the cutting slurry is examined. Based on the relation between the axial displacement of the roller and the feeding temperature of the cutting slurry, a feeding temperature profile of the cutting slurry is set, and based on the feeding temperature profile, the cutting slurry is fed. Thus, the ingot is cut by controlling the axial displacement of the roller, and warping of all the cut wafers is permitted to be in one direction. Thus, at the time of cutting the ingot by using a wire saw, the ingot can be cut easily with excellent repeatability by having warping of all the wafers in one direction.

Inventors:
OISHI HIROSHI (JP)
NAKAMATA DAISUKE (JP)
Application Number:
PCT/JP2007/066231
Publication Date:
March 27, 2008
Filing Date:
August 22, 2007
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK (JP)
OISHI HIROSHI (JP)
NAKAMATA DAISUKE (JP)
International Classes:
H01L21/304; B24B27/06; B28D5/04
Foreign References:
JPH05185419A1993-07-27
JP2003001624A2003-01-08
JPH09262826A1997-10-07
JPH05185419A1993-07-27
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (6-11 Ueno 7-chom, Taito-ku Tokyo, JP)
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