Title:
CYCLIC DEPOSITION METHOD FOR THIN FILM AND MANUFACTURING METHOD FOR SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/068948
Kind Code:
A1
Abstract:
According to one embodiment of the present invention, a cyclic method for depositing a thin film comprises a step for depositing an oxide film and a plasma processing step, wherein the step for depositing an oxide film repeatedly performs: a deposition step for depositing an object with a silicon thereon by injecting a silicon precursor into a chamber loaded with the object; a first purge step for removing an unreacted silicon precursor and a reaction byproduct from the inside of the chamber; a reaction step for forming the deposited silicon onto an oxide film comprising a silicon by introducing a first reaction source comprising oxygen into the chamber; and a second purge step for removing the unreacted first reaction source and the reaction byproduct from the inside of the chamber, and wherein the plasma processing step processes the oxide film comprising the silicon by introducing the plasma generated from the second reaction source comprising nitrogen into the chamber.
Inventors:
KIM HAI-WON (KR)
KIM SEOK-YUN (KR)
KIM SEOK-YUN (KR)
Application Number:
PCT/KR2014/008813
Publication Date:
May 14, 2015
Filing Date:
September 23, 2014
Export Citation:
Assignee:
EUGENE TECHNOLOGY CO LTD (KR)
International Classes:
H01L21/205
Foreign References:
| KR20120012582A | 2012-02-10 | |||
| KR100688575B1 | 2007-03-02 | |||
| KR20120054660A | 2012-05-30 | |||
| KR20070013337A | 2007-01-30 |
Attorney, Agent or Firm:
JEONG, Seong-Jin (KR)
정성진 (KR)
정성진 (KR)
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