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Title:
DIAMOND n-TYPE SEMICONDUCTOR, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR ELEMENT, AND ELECTRON EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2005/053029
Kind Code:
A1
Abstract:
There is provided a diamond n-type semiconductor whose carrier concentration change amount is sufficiently reduced in a wide temperature range. The diamond n-type semiconductor includes a diamond substrate and a diamond semiconductor formed on the main surface of the diamond substrate and judged to be n-type. The diamond semiconductor has a carrier concentration (electron concentration) temperature dependency showing a negative correlation and a hole coefficient temperature dependency showing a positive correlation at a part of the temperature range where it is judged to be n-type. The diamond n-type semiconductor having such characteristics can be obtained, for example, by forming a diamond semiconductor doped with a plenty of donor element while introducing impurities other than the donor element into the diamond substrate.

Inventors:
Namba, Akihiko c/o Itami Works of Sumitomo Electric Industries Ltd. (1-1, Koyakita 1-chom, Itami-shi Hyogo, 664-0016, JP)
Nishibayashi, Yoshiki c/o Itami Works of Sumitomo Electric Industries Ltd. (1-1, Koyakita 1-chom, Itami-shi Hyogo, 664-0016, JP)
Imai, Takahiro c/o Itami Works of Sumitomo Electric Industries Ltd. (1-1, Koyakita 1-chom, Itami-shi Hyogo, 664-0016, JP)
Application Number:
PCT/JP2004/017077
Publication Date:
June 09, 2005
Filing Date:
November 17, 2004
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD. (5-33, Kitahama 4-chome Chuo-k, Osaka-shi Osaka, 541-0041, JP)
Namba, Akihiko c/o Itami Works of Sumitomo Electric Industries Ltd. (1-1, Koyakita 1-chom, Itami-shi Hyogo, 664-0016, JP)
Nishibayashi, Yoshiki c/o Itami Works of Sumitomo Electric Industries Ltd. (1-1, Koyakita 1-chom, Itami-shi Hyogo, 664-0016, JP)
Imai, Takahiro c/o Itami Works of Sumitomo Electric Industries Ltd. (1-1, Koyakita 1-chom, Itami-shi Hyogo, 664-0016, JP)
International Classes:
H01J1/308; H01L29/16; (IPC1-7): H01L29/16; H01L29/66; H01J1/30
Attorney, Agent or Firm:
Hasegawa, Yoshiki (Soei Patent and Law Firm, Ginza First Bldg. 10-6, Ginza 1-chom, Chuo-ku Tokyo, 104-0061, JP)
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