Title:
DATA READING/WRITING METHOD, MEMORY, STORAGE DEVICE, AND TERMINAL
Document Type and Number:
WIPO Patent Application WO/2021/164032
Kind Code:
A1
Abstract:
Provided are a data reading/writing method, a memory, a storage device, and a terminal. The memory comprises S storage blocks, N global bit lines, and a signal amplification circuit, wherein each of the S storage blocks is connected to the N global bit lines, the N global bit lines are connected to the signal amplification circuit, and the signal amplification circuit is used to amplify electrical signals in the N global bit lines; and each storage block comprises N columns of storage units, N local bit lines and N bit line switches, wherein in each storage block, the i-th column of storage units are connected to the i-th local bit line, and the i-th local bit line is connected to the i-th global bit line by means of the i-th bit line switch among the N bit line switches. A storage array is fine-grained, so that i-th local bit lines of S storage blocks can share a global bit line, the local bit lines are shortened, the parasitic capacitance caused by the local bit lines is reduced, and the memory delay is reduced.
Inventors:
JIAO HUIFANG (CN)
HE RAN (CN)
FAN LUMING (CN)
PAN YUE (CN)
HE RAN (CN)
FAN LUMING (CN)
PAN YUE (CN)
Application Number:
PCT/CN2020/076279
Publication Date:
August 26, 2021
Filing Date:
February 21, 2020
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C11/413
Domestic Patent References:
| WO2016209542A1 | 2016-12-29 |
Foreign References:
| CN1516195A | 2004-07-28 | |||
| CN107799141A | 2018-03-13 | |||
| CN101221540A | 2008-07-16 | |||
| CN1591689A | 2005-03-09 | |||
| US20190361820A1 | 2019-11-28 |
Other References:
See also references of EP 4092676A4
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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