Title:
DATA WRITING METHOD, TEST METHOD, WRITING APPARATUS, MEDIUM, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/206748
Kind Code:
A1
Abstract:
The present disclosure provides a data writing method for a memory array, a test method for a memory array, a data writing apparatus for a memory array, a computer readable medium, and an electronic device. The data writing method comprises: receiving a first writing command, and selecting a target memory bank and a target column address according to the first writing command, data corresponding to the first writing command being first test data (S100); writing the first test data into the target column address of the memory bank selected according to the first writing command, and in the writing process, latching the first test data on an address bus, and at least continuing to execute a second writing command (S200); receiving a second writing command, and reselecting the target memory bank and the target column address according to the second writing command (S300); and writing, into the reselected target column address of the target memory bank, the first test data latched on the address bus (S400). The data writing time of the memory array can be shortened, and the data writing efficiency can be improved.
Inventors:
SUN YUANYUAN (CN)
WANG JIA (CN)
WANG JIA (CN)
Application Number:
PCT/CN2022/099381
Publication Date:
November 02, 2023
Filing Date:
June 17, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C29/08; G11C7/10
Foreign References:
| CN1825494A | 2006-08-30 | |||
| CN103514956A | 2014-01-15 | |||
| CN103000228A | 2013-03-27 | |||
| US20140036603A1 | 2014-02-06 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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