Title:
DEEP ULTRAVIOLET LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2018/151157
Kind Code:
A1
Abstract:
Provided are: a deep ultraviolet light emitting element which achieves a good balance between high luminous output and excellent reliability; and a method for producing this deep ultraviolet light emitting element. A deep ultraviolet light emitting element 100 according to the present invention sequentially comprises, on a substrate 10, an n-type semiconductor layer 30, a light emitting layer 40 and a p-type semiconductor layer 60. The light emitting layer 40 emits deep ultraviolet light; the p-type semiconductor layer 60 comprises a p-type first layer 60A and a p-type contact layer 60B that is in contact with the p-type first layer 60A on top of the p-type first layer 60A; the p-type contact layer 60B is formed from a group III-V semiconductor material other than a nitride or a group IV semiconductor material; and the p-type contact layer 60B functions as a reflective layer that reflects the deep ultraviolet light, while having a reflectance of 10% or more with respect to the light that is incident on the p-type contact layer 60B from the p-type first layer 60A and has a wavelength of 280 nm.
Inventors:
SHIBATA TOMOHIKO (JP)
Application Number:
PCT/JP2018/005087
Publication Date:
August 23, 2018
Filing Date:
February 14, 2018
Export Citation:
Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
International Classes:
H01L33/10; H01L33/32
Foreign References:
| JP2012248625A | 2012-12-13 | |||
| JP2002094110A | 2002-03-29 | |||
| JPH0897468A | 1996-04-12 | |||
| JP6039848B1 | 2016-12-07 | |||
| JP2015185655A | 2015-10-22 | |||
| US20100025712A1 | 2010-02-04 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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