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Title:
DEEP ULTRAVIOLET LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2019/069834
Kind Code:
A1
Abstract:
Provided are: a deep ultraviolet light emitting element which has achieved a good balance between high luminous output and excellent reliability; and a method for producing this deep ultraviolet light emitting element. A deep ultraviolet light emitting element according to the present invention sequentially comprises, on a substrate 10, an n-type semiconductor layer 30, a light emitting layer 40, a p-type electron blocking layer 60 and a p-type contact layer 70. The p-type contact layer 70 has a superlattice structure that is obtained by alternately laminating first layers 71 which are formed from AlxGa1-xN having an Al composition ratio x that is higher than the Al composition ratio w0 of a layer that discharges deep ultraviolet light in the light emitting layer 40 and second layers 72 which are formed from AlyGa1-yN having an Al composition ratio y that is lower than the Al composition ratio x; and the Al composition ratio w0, the Al composition ratio x, the Al composition ratio y and the thickness-average Al composition ratio z of the p-type contact layer satisfy formula (1) 0.030 < (z - w0) < 0.20 and formula (2) 0.050 ≤ (x - y) ≤ 0.47.

Inventors:
WATANABE Yasuhiro (4-14-1, Sotokand, Chiyoda-ku Tokyo 21, 〒1010021, JP)
Application Number:
JP2018/036549
Publication Date:
April 11, 2019
Filing Date:
September 28, 2018
Export Citation:
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Assignee:
DOWA ELECTRONICS MATERIALS CO., LTD. (4-14-1, Sotokanda Chiyoda-ku Tokyo, 21, 〒1010021, JP)
International Classes:
H01L33/32; H01L33/06
Domestic Patent References:
WO2017017891A12017-02-02
WO2017134713A12017-08-10
Foreign References:
JP2002280610A2002-09-27
JP2011049322A2011-03-10
JP2011066047A2011-03-31
Attorney, Agent or Firm:
SUGIMURA Kenji (36F Kasumigaseki Common Gate West, 3-2-1 Kasumigasek, Chiyoda-ku Tokyo 13, 〒1000013, JP)
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