Title:
DEEP UV LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2017/212766
Kind Code:
A1
Abstract:
A deep UV light emitting element 10 is provided with: a substrate 12 having a first main surface 12a, and a second main surface 12b on the opposite side from the first main surface 12a; an active layer 20 provided on the first main surface 12a of the substrate 12, the active layer 20 emitting deep UV light; and a light extraction layer 40 provided on the second main surface 12b of the substrate 12, the light extraction layer 40 being formed of a material having a refractive index in relation to the deep UV emitted by the active layer 20 that is higher than that of the substrate 12, and lower than that of the active layer 20. The light extraction layer 40 may be an aluminum gallium nitride (AlGaN) semiconductor material layer, or an aluminum nitride (AlN) layer.
Inventors:
INAZU TETSUHIKO (JP)
PRENOT CYRIL (JP)
ISHIGURO HISANORI (JP)
PRENOT CYRIL (JP)
ISHIGURO HISANORI (JP)
Application Number:
PCT/JP2017/014239
Publication Date:
December 14, 2017
Filing Date:
April 05, 2017
Export Citation:
Assignee:
NIKKISO CO LTD (JP)
International Classes:
H01L33/22
Foreign References:
| JP2014068010A | 2014-04-17 | |||
| JP2006278751A | 2006-10-12 | |||
| JP2011091195A | 2011-05-06 | |||
| JP2006222288A | 2006-08-24 | |||
| JP2013222925A | 2013-10-28 | |||
| JP2015119108A | 2015-06-25 | |||
| JP2014526799A | 2014-10-06 | |||
| JP2013232478A | 2013-11-14 |
Attorney, Agent or Firm:
MORISHITA Sakaki (JP)
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