DEFECT DETECTION DEVICE, DEFECT DETECTION METHOD, AND DEFECT OBSERVATION APPARATUS PROVIDED WITH SAME

WIPO Patent Application WO/2020/183601

A1

In order to enable observation, at a high speed and at a high detection rate, of defects or the like caused on a semiconductor wafer during a manufacturing process of a semiconductor device, this defect detection device is provided with: an illumination optical system for irradiating a wafer with light; an imaging optical system for capturing an image of scattered light generated on the wafer irradiated with light by the illumination optical system; and an image processing unit for performing image processing on the image of the scattered light captured by the imaging optical system and thereby educing any defects on the wafer, wherein the imaging optical system includes an objective lens, a filter part for partially blocking the light having transmitted through the objective lens, and an image forming lens for forming, on an imaging element, an image of light having transmitted through the filter part. The filter part is configured to have a first microlens array for collecting parallel light having transmitted through the objective lens, a shutter array that is provided with a light transmission portion at a focal position of the first microlens array, and a second microlens array disposed on the opposite side to the first microlens array across the shutter array.

OTANI YUKO (JP)
AOKI KAZUO (JP)
MATSUMOTO SHUNICHI (JP)
URANO YUTA (JP)

PCT/JP2019/009933

September 17, 2020

March 12, 2019

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HITACHI HIGH TECH CORP (JP)

G01N21/956; H01L21/66

WO2004036284A1

2004-04-29

JP2013168559A	2013-08-29
JP2016528478A	2016-09-15
JP2011106974A	2011-06-02
JP2012127848A	2012-07-05
JP2015230439A	2015-12-21

POLAIRE I.P.C. (JP)

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