Title:
DEGASSING METHOD, DEGASSING CHAMBER AND SEMICONDUCTOR PROCESSING EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/2018/058898
Kind Code:
A1
Abstract:
Provided are a degassing method, a degassing chamber and semiconductor processing equipment. The degassing method comprises: step S1: heating the degassing chamber, so that the internal temperature therein reaches a preset temperature and is kept constant at this preset temperature; and step S2: introducing a substrate to be degassed into the degassing chamber, and taking the substrate out of same after heating for a preset period of time. The degassing method provided by the present invention can not only improve the temperature uniformity of the same batch of substrates and different batches of substrates, but can also achieve the free moving-in and moving-out of the substrate to be degassed, thereby increasing the production capacity of the equipment.
Inventors:
YE HUA (CN)
JIA QIANG (CN)
XU YUE (CN)
JIANG BINGXUAN (CN)
HOU JUE (CN)
SHI PU (CN)
ZHENG JINGUO (CN)
ZONG LINGBEI (CN)
ZHAO MENGXIN (CN)
DING PEIJUN (CN)
WANG HOUGONG (CN)
JIA QIANG (CN)
XU YUE (CN)
JIANG BINGXUAN (CN)
HOU JUE (CN)
SHI PU (CN)
ZHENG JINGUO (CN)
ZONG LINGBEI (CN)
ZHAO MENGXIN (CN)
DING PEIJUN (CN)
WANG HOUGONG (CN)
Application Number:
PCT/CN2017/075973
Publication Date:
April 05, 2018
Filing Date:
March 08, 2017
Export Citation:
Assignee:
BEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD (CN)
International Classes:
C23C14/56; H01L21/67
Foreign References:
| CN105441899A | 2016-03-30 | |||
| CN105789084A | 2016-07-20 | |||
| CN101256941A | 2008-09-03 | |||
| CN103668073A | 2014-03-26 | |||
| CN202246836U | 2012-05-30 | |||
| CN103149952A | 2013-06-12 | |||
| JPH0445261A | 1992-02-14 | |||
| JPS6411973A | 1989-01-17 |
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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