Title:
DELAY CONTROL CIRCUIT AND METHOD, AND SEMICONDUCTOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2024/073910
Kind Code:
A1
Abstract:
Embodiments of the present disclosure provide a delay control circuit and method, and a semiconductor memory. The delay control circuit comprises a clock module and a delay module; the clock module is configured to receive a temperature adjusting signal and generate a first clock signal according to the temperature adjusting signal, and a clock period of the first clock signal is a preset value; the delay module is configured to receive the first clock signal and an initial command signal, and perform delay processing on the initial command signal according to the first clock signal, so as to obtain a target command signal; and the time interval between the target command signal and the initial command signal meets a preset timing condition.
More Like This:
| WO/2004/095465 | SEMICONDUCTOR MEMORY |
| WO/2005/050654 | BACK-BIAS VOLTAGE GENERATOR WITH TEMPERATURE CONTROL |
| WO/2005/059920 | INTERNAL VOLTAGE GNERATOR WITH TEMPERATURE CONTROL |
Inventors:
HUANG ZEQUN (CN)
SUN KAI (CN)
SUN KAI (CN)
Application Number:
PCT/CN2022/127123
Publication Date:
April 11, 2024
Filing Date:
October 24, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C7/04; G11C7/22; G11C11/4076
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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