Title:
DEPOSITION METHODOLOGY FOR SUPERCONDUCTOR INTERCONNECTS
Document Type and Number:
WIPO Patent Application WO/2019/036081
Kind Code:
A3
Abstract:
A method of forming a superconductor interconnect structure is disclosed. The method includes forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further includes depositing a superconducting metal in the interconnect opening, by performing a series of superconducting deposition and cooling processes to maintain a chamber temperature at or below a predetermined temperature until the superconducting metal has a desired thickness, to form a superconducting element in the superconductor interconnect structure.
Inventors:
KIRBY CHRISTOPHER F (US)
LUU VIVIEN M (US)
RENNIE MICHAEL (US)
MCLAUGHLIN SEAN R (US)
LUU VIVIEN M (US)
RENNIE MICHAEL (US)
MCLAUGHLIN SEAN R (US)
Application Number:
PCT/US2018/033299
Publication Date:
April 18, 2019
Filing Date:
May 18, 2018
Export Citation:
Assignee:
NORTHROP GRUMMAN SYSTEMS CORP (US)
International Classes:
H01L21/285; H01L21/768; H01L23/532; H01L39/24
Foreign References:
| US20150119252A1 | 2015-04-30 | |||
| US20090183984A1 | 2009-07-23 | |||
| EP1076110A1 | 2001-02-14 | |||
| US20150179918A1 | 2015-06-25 | |||
| JP2004232054A | 2004-08-19 |
Attorney, Agent or Firm:
HARRIS, Christopher P. (US)
Download PDF: